features adoption of fbet, mbit processes. low collector-to-emitter saturation voltage. large current capacity and wide aso. fast switching speed. very small size making it easy to provide highdensity, small-sized hybrid ic? s. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -25 v emitter-base voltage v ebo -6 v collector current i c -2 a collector current (pulse) i cp -5 a collector dissipation p c 500 mw jumction temperature t j 150 storage temperature t stg -55to+150 sales@twtysemi.com http://www.twtysemi.com sales@twtysemi.com 1 of 2 http://www.twtysemi.com 2SB1121 product specification 4008-318-123
2SB1121 electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb = -20v , i e =0 -0.1 a emitter cutoff current i ebo v cb =-4v,i e =0 -0.1 a dc current gain h fe v ce =-2v,i c = -100ma 100 560 gain bandwidth product f t v ce = -10v , i c = -50ma 150 mhz collector-emitter saturation voltage v ce(sat) i c = -1.5a , i b = -75ma -0.35 -0.6 v base-emitter saturation voltage v be(sat) i c = -1.5a , i b = -75ma -0.85 -1.2 v collector-base breakdown voltage v (br)cbo i c = -10a , i e =0 -30 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,r be = -25 v emitter-base breakdown voltage v (br)ebo i e = -10a , i c =0 -6 v output capacitance c ob v cb = -10v , f = 1mhz 32 pf turn-on time t on 60 ns storage time t stg 350 ns fall time t f 25 ns h fe classification marking rank e f g hfe 100 200 160 320 280 560 bc sales@twtysemi.com 2 of 2 http://www.twtysemi.com product specification 4008-318-123
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